Cart (Loading....) | Create Account
Close category search window
 

Relaxation of a strained quantum well at a cleaved surface. Part II: Effect of cubic symmetry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Davies, J.H. ; Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, United Kingdom ; Offermans, Peter ; Koenraad, Paul M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2030415 

In a previous paper [J. H. Davies, D. M. Bruls, J. W. A. M. Vugs, and P. M. Koenraad, J. Appl. Phys. 91, 4171 (2002). Part I.] we compared theory and experiment for the relaxation at a cleaved surface of a strained quantum well of InGaAs in GaAs. The measurements were taken with a scanning tunneling microscope and the analytic calculation used classical elastic theory for a linear, isotropic, homogeneous medium. Qualitative agreement was good but the theory gave only about 80% of the observed displacement. We have therefore extended the calculation to explore the effect of cubic symmetry and the orientation of the cleaved surface. The “strain suppression” method reduces the problem to the response of a half space to traction on its surface. We have calculated this for orthotropic symmetry, which includes the common orientations of orthorhombic, tetragonal, hexagonal, and cubic crystals. Anisotropy has no effect on the shape of the relaxed surface but the magnitude of relaxation changes. For cubic material there is no effect on the strain along the direction of growth if the cleaved surface is a {001} plane and a reduction of a few percent for a {011} plane, which is the case of experimental interest. The outward relaxation is reduced by about 20% due to cubic symmetry for a {001} plane because the shear stiffness of GaAs is higher than in the isotropic model, and is a further 10% smaller for a {011} plane. Thus the results for cubic symmetry lie further from the measurements than those calculated for isotropic material. Interfacial forces may contribute to this discrepancy but we suggest that nonlinear elasticity is probably responsible.

Published in:

Journal of Applied Physics  (Volume:98 ,  Issue: 5 )

Date of Publication:

Sep 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.