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A systematic study of InGaAs metallic source/drain Schottky barrier (SB) FET is conducted from a structural and material perspective by comparing it with InGaAs MOSFET and Si SBFET counterparts. The InGaAs SBFET exhibits a superior subthreshold swing compared to its Si counterpart due to its smaller transport mass. The contrary occurs at smaller channel length, demonstrating that InGaAs SBFETs are not as scalable. Since these devices exhibit different subthreshold and transconductance properties, their relative device advantage depends on the operating condition. We demonstrate that there is a window where the ION of an InGaAs SBFET can outperform its InGaAs MOSFET and Si SBFET counterparts.