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Phase change memory (PCM) becomes very hot in Non volatile memory (NVM) with 65 nm below technologies due to its special storage mode. However, several bottlenecks like power, thermal stability and cycling ability limit the development of PCM. Thus, in this paper, a novel phase change memory based on alloy Ga3Sb8Te1 is designed, then FEA transient thermal, crystalline kinetics analysis and SPICE macro model of embedded PCM based on this material are established. The results of FEA transient thermal simulation and crystalline kinetics analysis show that comparing with conventional GeSbTe-base material the new phase change alloy Ga3Sb8Te1 has lower reset power, higher thermal stability and cycling ability as well as faster set frequency.
Date of Conference: 5-7 May 2008