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Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3(Gd2O3) dielectric

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5 Author(s)

In this work, we have developed a self-aligned gate process for fabricating inversion n-channel MOSFET's of strained InGaAs on GaAs using TiN as the gate metal and GGO as the gate dielectric. Excellent performances of MOS diodes and MOSFET device have been demonstrated in this work, and are much better than other results of inversion-channel III-V MOSFET's published earlier.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007

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