By Topic

Defect Passivation by Selenium-Ion Implantation for Poly-Si Thin Film Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lai, J. ; California Univ., berkeley ; Tsu-Jae King Liu

Low-dose (1013 cm-2) selenium-ion implantation prior to pulsed-excimer-laser crystallization is investigated as a low-thermal-budget defect-passivation technique for polycrystalline silicon TFTs. Selenium defect passivation is found to be effective for improving TFT performance and for providing superior TFT reliability as compared with hydrogenation. Ion implantation, passivation, polycrystalline silicon (poly-Si), selenium (Se), thin-film transistor (TFT).

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 8 )