Cart (Loading....) | Create Account
Close category search window
 

Analysis of Super Cut-off Transistors for Ultralow Power Digital Logic Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Raychowdhury, A. ; Dept. of Electr. & Comput. Eng., Purdue Univ., IN ; Xuanyao Fong ; Qikai Chen ; Roy, K.

Super cut-off devices with sub-60mV/decade subthreshold swings have recently been demonstrated and being extensively studied. This paper presents a feasibility analysis of such tunneling devices for ultralow power subthreshold logic. Analysis shows that this device can deliver 800times higher performance (@iso-IOFF) compared to a MOSFET. The possible use of this device as a sleep transistor in conjunction with the regular Si MOSFET shows 2000times average improvement in leakage power compared to Si MOSFETs

Published in:

Low Power Electronics and Design, 2006. ISLPED'06. Proceedings of the 2006 International Symposium on

Date of Conference:

4-6 Oct. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.