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Dual-gate gallium-arsenide microwave field-effect transistor

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4 Author(s)
Turner, J.A. ; Plessey Co., Allen Clarke Research Centre, Towcester, UK ; Waller, A.J. ; Kelly, E. ; Parker, D.

Dual-gate gallium-arsenide field-effect transistors have been fabricated which give power gains greater than those which can be obtained from single-gate devices of similar gate length. Unconditionally stable gains in excess of 12 dB at 5 GHz have been measured for these devices.

Published in:

Electronics Letters  (Volume:7 ,  Issue: 22 )

Date of Publication:

November 4 1971

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