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Planar Silicon Device Failure Mechanism Studies with the Microanalyzer Electron Probe

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2 Author(s)
Nealey, C.C. ; Senior Research Engineer, Autonetics, A Division of North American Aviation, Inc. ; Laakso, C.W.

APPLICATION of the Physics of Failure approach to electron microprobe testing enables isolation of failure mechanisms at the surface, subsurface, interface, diffusion regions and junctions of planar silicon devices. Foreign element and material defects have been identified. Static and dynamic operation of circuits under test enables current and voltage distribution analyses through the device crystal.

Published in:

Physics of Failure in Electronics, 1964. Third Annual Symposium on the

Date of Conference:

Sept. 1964