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A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

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12 Author(s)

A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F2 (0.0648 mum2) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times les50ns are demonstrated

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 4 )