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Cathode-ray storage tubes are subject to interference which is caused by secondary electron flow between storage locations. A method of reducing this interference by modulating the cathode-ray tube differently during "action" and "regeneration" periods is described. This modulation builds up during "regeneration" periods a negative charge barrier around each spot. The negative charge barrier in turn reduces the flow of secondary electrons from one spot to adjacent spots during "action" periods. This results in decreased secondary electron flow from one storage location to another during "action" periods at the expense of increased secondary electron flow between storage locations during "regeneration" periods. Thus advantage is taken of the fact that practical computer stores can tolerate during "regeneration" periods redistribution currents between adjacent storage locations of the order of 100 times those flowing during "action" periods.