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Self-assembling resists for nanolithography

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6 Author(s)
Nealey, Paul F. ; Dept. of Chem. & Biol. Eng., Wisconsin-Madison Univ., Madison, WI ; Edwards, Erik W. ; Muller, M. ; Stoykovich, Mark P.
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In this paper we present our approach for integrating block copolymers into the lithographic process so as to enable molecular-level control over the dimensions and shapes of nanoscale patterned resist features and simultaneously retain essential process attributes such as pattern perfection, registration, and the ability to create non-regular device-oriented structures. Combining self-assembling materials with advanced lithographic tools may allow current manufacturing techniques to be extended to the scale of 10 nm and below and meet the long-term requirements detailed in the International Technology Roadmap for Semiconductors (2004)

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005