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FinFET-based SRAM design

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5 Author(s)
Zheng Guo ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Balasubramanian, S. ; Zlatanovici, R. ; Tsu-Jae King
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Intrinsic variations and challenging leakage control in today's bulk-Si MOSFETs limit the scaling of SRAM. Design tradeoffs in six-transistor (6-T) and four-transistor (4-T) SRAM cells are presented in this work. It is found that 6-T and 4-T FinFET-based SRAM cells designed with built-in feedback achieve significant improvements in the cell static noise margin (SNM) without area penalty. Up to 2× improvement in SNM can be achieved in 6-T FinFET-based SRAM cells. A 4-T FinFET-based SRAM cell with built-in feedback can achieve sub-100pA per-cell standby current and offer the similar improvements in SNM as the 6-T cell with feedback, making them attractive for low-power, low-voltage applications.

Published in:

Low Power Electronics and Design, 2005. ISLPED '05. Proceedings of the 2005 International Symposium on

Date of Conference:

8-10 Aug. 2005