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Simulation of the quantum-confined Stark effect in a single InGaN quantum dot

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8 Author(s)
Lee, K.H. ; Dept. of Phys., Oxford Univ., UK ; Robinson, James W. ; Rice, James H. ; Na, J.H.
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By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.

Published in:

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Date of Conference:

19-22 Sept. 2005