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Optimization of MOS amplifier performance through channel length and inversion level selection

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3 Author(s)
Hollis, T.M. ; Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA ; Comer, D.J. ; Comer, D.T.

The dependence of MOS amplifier performance on channel length and channel inversion is simulated and discussed. Suggestions are made regarding the optimization of voltage gain, nonlinear distortion and the gain-bandwidth product (GBW) through careful device length and inversion level selection. The midband voltage gain of the common-source amplifier is shown to remain relatively constant when biased for weak inversion operation, with short-channel devices continuing to amplify effectively at very low levels of inversion, allowing for extremely low power circuits. Total harmonic distortion is reduced through decreasing channel length and/or the level of channel inversion. The GBW is optimized through the use of minimum sized transistors biased to operate in the strong inversion region.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:52 ,  Issue: 9 )