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Homoepitaxial growth and hot-wall low-pressure chemical vapor deposition reactor MOS structures of 4H-SiC on off-oriented n-type (0001) Si-faces

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8 Author(s)
Guosheng Sun ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Jin Ning ; Yongxing Zhang ; Xin Gao
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Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low-pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O2 and H2 atmosphere at a temperature of 1150 C. The oxide was investigated by employing X-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics are presented.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004

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