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A self-consistent Monte Carlo particle model to simulate semiconductor microcomponents of any geometry is presented. The model is aimed at a full understanding of the functioning of the device down to microscopic level. The simulation consists briefly of following the transport histories of individual carriers. The time of free flight, the frequencies of the various types of interaction between the lattice and the carriers and the scattering angles have distinct stochastic distributions. By choosing random numbers with the same distributions, it is possible to simulate carrier transport. After a review of semiconductor physics, the details of the method is explained. This is followed by examples, mainly from simulation of GaAs MESFET's, to demonstrate some of the abilities of the model. The distributions of the carriers and fields are used to explain physical phenomena such as substrate currents and negative differential resistivity. The only parameters that enter the calculations are those describing the geometry of the device and those fundamental to the semiconductor, such as material constants, the phonon spectra and the band structure. Any adjustable, geometry dependent parameters do not enter the model.