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Etching characteristics of 500nm thick Ta was investigated using inductively coupled BCl/sub 3//Cl/sub 2//Ar plasma. A positive photoresist (PR) with a thickness of 1.2/spl mu/m on Ta films were patterned using conventional photolithography. Etch rate and profiles were measured by a field-emission scanning electron microscopy (FE-SEM). XPS was used to investigate the chemical state of the etched surface for various gas mixing ratios.
Date of Conference: 29-31 Oct. 2003