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Embedded twin MONOS flash memories with 4 ns and 15 ns fast access times

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7 Author(s)
Ogura, T. ; Halo LSI Inc., New York, NY, USA ; Ogura, N. ; Kirihara, M. ; Ki Tae Park
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By adding a shared bit diffusion contact to the twin MONOS, a high performance, low voltage, low power NOR-type memory can be achieved. The process is simple and the array maintains its dual density advantage, which makes this flash memory technology suitable for embedded as well as standalone applications. Two fast access embedded designs will be discussed: a) 16 Mb with 15 ns access time and b) 128 Kb with 4 ns access time.

Published in:

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

12-14 June 2003

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