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A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators

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2 Author(s)
B. P. Otis ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; J. M. Rabaey

A low-power low-phase-noise 1.9-GHz RF oscillator is presented. The oscillator employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18-μm CMOS process. This paper addresses design issues involved in codesigning micromachined resonators with CMOS circuitry to realize ultralow-power RF transceiver components. The oscillator achieves a phase-noise performance of -100 dBc/Hz at 10-kHz offset, -120 dBc/Hz at 100-kHz offset, and -140 dBc/Hz at 1-MHz offset. The startup time of the oscillator is less than 1 μs. The oscillator core consumes 300 μA from a 1-V supply.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:38 ,  Issue: 7 )