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Analytical modeling and design criteria for traveling-wave FET amplifiers

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3 Author(s)
S. D'Agostino ; Dept. of Electron., Rome Univ., Italy ; G. D'Inzeo ; L. Tudini

The theoretical modeling and design of a traveling-wave FET are described. The device shows the capability of wide-bandwidth performance and high gain and could be useful in power applications. The proposed analytical model considers the full mode effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.<>

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:40 ,  Issue: 2 )