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Yield enhancement challenges for 90 nm and beyond

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2 Author(s)
Goel, H. ; Texas Instrum. Inc., Dallas, TX, USA ; Dance, D.

This paper highlights that some processing issues, which typically are systematic in nature, could cause random effects due to marginality issues. High aspect ratio structures, such as contacts and via challenges are exacerbated due to high density, increased critical area, and detection limitations. Process complexity, defect free mask production, and wafer handling issues also add to the challenge of ramping yields quickly.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

Date of Conference:

31 March-1 April 2003