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SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes

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6 Author(s)
Niu Jin ; Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA ; Rice, A.T. ; Berger, Paul R. ; Thompson, Phillip E.
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Si/SiGe resonant interband tunnel diodes (RITD) employing δ-doping spikes of P and B that demonstrate negative differential resistance (NDR) at room temperature are presented. Thin SiGe layers sandwiching the B δ-doping spike used to suppress B out-diffusion are discussed. Three structures were investigated in this study. Structure A, which employed a symmetrical 1 nm Si /4 nm Si0.6Ge0.4/1 nm Si (1/4/1) spacer, showed a peak-to-valley current ratio (PVCR) of 2.7 after 1 minute annealing at 725°C. Structure B with an asymmetrical 0 nm Si/4 nm Si0.6Ge0.4/2 nm Si (0/4/2) spacer configuration showed a PVCR of 3.2 after 1 minute annealing at 800°C. Structure C, which is the same as Structure B, except that a 1 nm Si0.6Ge0.4 cladding layer was grown below the B δ-layer, further improved PVCR to 3.6 after 1 minute annealing at 825°C. Results clearly show that, by introducing SiGe layers to clad the B delta-doping layer, the B diffusion is suppressed during the post growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in eliminating defects and results in a lower valley current and higher PVCR.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002