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A 2-18 GHz monolithic phase shifter for electronic warfare phase array applications

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3 Author(s)
Levy, D. ; Thomson-CSF/RCM, Malakoff, France ; Noblet, A. ; Bender, Y.W.

The authors described a 2-18-GHz continuously variable phase shifter realized in a GaAs monolithic technology. It comprises in an 8.2*3 mm/sup 2/ area, one distributed amplifier, a four-orthogonal-vector circuit, and three active two-port combiners. Good temperature performance was obtained, with typical variations of 0. 025 dB/ degrees C and 0.3 deg/ degrees C. Features of circuit fabrication and device control are discussed.<>

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Date of Conference:

6-9 Nov. 1988