Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-triggeroscillators
Yoon, S.-M.
Tokumitsu, E.
Ishiwara, H.
Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Aug 2000
Volume: 47,
Issue: 8
On page(s): 1630-1635
ISSN: 0018-9383
References Cited: 11
CODEN: IETDAI
INSPEC Accession Number: 6674313
Digital Object Identifier: 10.1109/16.853041
Current Version Published: 2002-08-06
Abstract
A pulse frequency modulation (PFM) type ferroelectric neuron
circuit composed of a metal-ferroelectric-semiconductor field effect
transistor (MFSFET) and a CMOS Schmitt-trigger oscillator was fabricated
on an SOI structure, in which
SrBi2Ta2O9 (SBT) was used as a
ferroelectric gate material of the FET. It was found that the fabricated
MFSFET showed a relatively good ID-VG (drain
current versus gate voltage) characteristic with a hysteresis loop due
to the ferroelectricity of the SBT film and that it acted as a synapse
device with adaptive-learning function. It was also found that the
output pulse height of the circuit was as high as the power supply
voltage and that output pulse frequency was changed as the number of
applied input pulses increased
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