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Relationships among properties of sputtered thin films andsputtering process parameters
Kolar, M.   Mach, P.  
Dept. of Electrotechnol., Czech Tech. Univ., Prague;

This paper appears in: Electronics Technology: Concurrent Engineering in Electronic Packaging, 2001. 24th International Spring Seminar on
Publication Date: 2001
On page(s): 42-46
Meeting Date: 05/05/2001 - 05/09/2001
Location: Calimanesti-Caciulata, Romania
ISBN: 0-7803-7111-9
References Cited: 4
INSPEC Accession Number: 7080992
Digital Object Identifier: 10.1109/ISSE.2001.931006
Current Version Published: 2002-08-07

Abstract
This paper focuses on the investigation of the influence of process parameters (pressure, applied power, sputtering time) during the radio frequency magnetron sputtering of nickel, aluminum and combined aluminum-silicon on properties of thin films. The experiments were carried out on the BALZERS PLS 160 radio frequency magnetron sputtering unit, using an argon atmosphere. The sheet resistance and the thickness of the films were measured. The influence of temperature on the sheet resistance was examined as well

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