Photovoltaic properties of the Bi4Ti3O12/Si heterostructures
Pintilie, L.
Pintilie, I.
Alexe, M.
Nat. Inst. of Mater. Res., Bucharest-Magurele;
This paper appears in: Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Publication Date: 1999
Volume: 1,
On page(s): 397-400 vol.1
Meeting Date: 10/05/1999 - 10/09/1999
Location: Sinaia, Romania
ISBN: 0-7803-5139-8
References Cited: 16
INSPEC Accession Number: 6529544
Digital Object Identifier: 10.1109/SMICND.1999.810546
Current Version Published: 2002-08-06
Abstract
Photovoltaic properties of the
Bi4Ti3O12/Si heterostructures were
investigated in the 250-1100 nm wavelength range. Four bands centered on
400 nm, 500 nm, 865 nm and 1025 nm are observed in the normalized
spectral distributions. The relative amplitude of the peaks
corresponding to these bands depends on the annealing temperature and
ferroelectric polarization
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