The effect of backside films on rapid thermal oxidation (RTO)growth on silicon wafers
Omar, A.
Ahmad, I.
Semicond. Technol. Centre, Kuala Lumpur;
This paper appears in: Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Publication Date: 1998
On page(s): 80-85
Meeting Date: 11/24/1998 - 11/26/1998
Location: Bangi, Malaysia
ISBN: 0-7803-4971-7
References Cited: 6
INSPEC Accession Number: 6430649
Digital Object Identifier: 10.1109/SMELEC.1998.781154
Current Version Published: 2002-08-06
Abstract
The effect of backside films, namely silicon dioxide, silicon
nitride and bare silicon on rapid thermal oxidation (RTO) growth on
silicon wafers by the rapid thermal annealing technique was
systematically studied. There was also a comparison study on the effect
of doped backside films with phosphorus at 4×1014
atoms/cm2 by ion implantation at 100 keV and the undoped
films. The RTO layer thickness has been measured by ellipsometry and the
target thickness was 10 nm. The rapid thermal annealing system used was
the AG Associates 2146 Heatpulse model. The temperature chosen was
1100°C. It was demonstrated that thinner RTO layers could be
obtained by having sufficient silicon dioxide film at the backside;
however, the presence of doped backside layers has no effect on the
tunnel oxide growth
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