Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions
Netel, H.
Jochum, J.
Labov, S.E.
Mears, C.A.
Frank, M.
Chow, D.
Lindeman, M.A.
Hiller, L.J.
Phys. & Space Technol. Directorate, Lawrence Livermore Nat. Lab., CA;
This paper appears in: Applied Superconductivity, IEEE Transactions on
Publication Date: Jun 1997
Volume: 7,
Issue: 2, Part 3
On page(s): 3379-3382
Meeting Date: 08/25/1996 - 08/30/1996
Location: Pittsburgh, PA, USA
ISSN: 1051-8223
References Cited: 5
CODEN: ITASE9
INSPEC Accession Number: 5707548
Digital Object Identifier: 10.1109/77.622099
Current Version Published: 2002-08-06
Abstract
We have fabricated Ag/Al2O3/Al tunnel
junctions on Si substrates using a new process. This process was
developed to fabricate superconducting tunnel junctions (STJs) on the
surface of a superconductor. These junctions allow us to study the
proximity effect of a superconducting Al film on a normal metal trapping
layer. In addition, these devices allow us to measure the hot-electron
diffusion constant using a single junction. Lastly these devices will
help us optimize the design and fabrication of tunnel junctions on the
surface of high-Z, ultra-pure superconducting crystals
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