Home  |   Login  |   Logout  |   Access Information  |   Alerts  |   Purchase History  |   Cart  |   Sitemap  |   Help   
 
Abstract
BROWSE SEARCH IEEE XPLORE GUIDE SUPPORT
arrow_leftView TOC
Email/Printer Friendly Format  
 

High contrast GaInAs:Fe photoconductive optical AND gate fortime-division demultiplexing
Desurvive, E.   Tell, B.   Kaminow, I.P.   Qua, G.J.   Brown-Goebeler, K.F.   Miller, B.I.   Koren, U.  
AT&T Bell Labs., Crawford Hill Lab., Holmdel, NJ;

This paper appears in: Electronics Letters
Publication Date: 31 Mar 1988
Volume: 24,  Issue: 7
On page(s): 396-397
ISSN: 0013-5194
References Cited: 5
CODEN: ELLEAK
INSPEC Accession Number: 3151141
Current Version Published: 2002-08-06

Abstract
A high-contrast, three port optical AND gate based on the photoconductive effect in Ga0.47In0.53As:Fe and operating in the λ=1.3-5 μm wavelength range is demonstrated. A 250:1 optical power contrast ratio (or 48 dB in electrical power after detection) is obtained in an optical-to-optical time division demultiplexing of a 100 MHz pulse train by a 6.25 MHz clock, both at λ=1.3 μm, with the demultiplexed output pulses at λ=1.5 μm

Index Terms
Available to subscribers and IEEE members.

References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
You are not logged in.
Guests may access Abstract records free of charge.
Login
Username
Password
» Forgot your password?
Please remember to log out when you have finished your session.
You must log in to access:
• Advanced or Author Search
• CrossRef Search
• AbstractPlus Records
• Full Text PDF
• Full Text HTML
Access this document
Full Text: PDF (220 KB)
» Buy this document now
»  Learn more about
»  Learn more about
    purchasing articles
    and standards
Download this citation
Available to subscribers and IEEE members.
 
arrow_leftView TOC   |  Back to toparrow_up
Indexed by IEE Inspec
© Copyright 2009 IEEE – All Rights Reserved