A unified model for the flicker noise in metal-oxide-semiconductorfield-effect transistors
Hung, K.K.
Ko, P.K.
Hu, C.
Cheng, Y.C.
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Mar 1990
Volume: 37,
Issue: 3, Part 1
On page(s): 654-665
ISSN: 0018-9383
References Cited: 49
CODEN: IETDAI
INSPEC Accession Number: 3629153
Digital Object Identifier: 10.1109/16.47770
Current Version Published: 2002-08-06
Abstract
A unified flicker noise model which incorporates both the number
fluctuation and the correlated surface mobility fluctuation mechanism is
discussed. The latter is attributed to the Coulombic scattering effect
of the fluctuating oxide charge. The model has a functional form
resembling that of the number fluctuation theory, but at certain bias
conditions it may reduce to a form compatible with Hooge's empirical
expression. The model can unify the noise data reported in the
literature, without making any ad hoc assumption on the noise generation
mechanism. Specifically, the model can predict the right magnitude and
bias dependence of the empirical Hooge parameter. Simulated flicker
noise characteristics obtained with a circuit-simulation-oriented
flicker noise model based on the new formulation were compared with
experimental noise data. Excellent agreement between the calculations
and measurement was observed in both the linear and saturation regions
for MOS transistors fabricated by different technologies. The work shows
that the flicker noise in MOS transistors can be completely explained by
the trap charge fluctuation mechanism, which produces mobile carrier
number fluctuation and correlated surface mobility fluctuation
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