Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs
Jun-Rong Chen
Yi-An Chang
Hao-Chung Kuo
Tien-Chang Lu
Yen-Kuang Kuo
Shing-Chung Wang
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu;
Abstract
Visible InGaP/InGaAlP resonant-cavity light-emitting diodes with low temperature sensitivity output characteristics were demonstrated. By means of extending the resonant cavity to a thickness of three wavelength (3 lambda), the degree of power variation between 25 and 95degC for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1-lambda cavity) to -0.6 dB. Numerical simulation showed that the insensitive temperature dependence of output characteristics was attributed to the reduced electron leakage current.
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