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Simulation of quantum wells with `spikes' and `dips'
Laakso, A. Dumitrescu, M. Toikkanen, L. Tukiainen, A. Rimpilainen, V. Pessa, M.
Tampere Univ. of Technol., Tampere;

This paper appears in: Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Publication Date: 24-28 Sept. 2007
On page(s): 47-48
Location: Newark, DE,
ISBN: 978-1-4244-1431-4
INSPEC Accession Number: 9684487
Digital Object Identifier: 10.1109/NUSOD.2007.4349017
Current Version Published: 2007-10-15

Abstract
The use of thin high-bandgap 'spikes' or thin low-bandgap 'dips' inside conventional rectangular quantum wells gives supplementary flexibility in engineering intra- and inter-band energy level separation. The paper presents simulation and experimental studies of the effects of 'spikes' and 'dips' on the fundamental quantum well properties.

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