Excess current in p¿n junctions associated with surface states
Esteve, D.
CRNS, Laboratoire d'Automatique et de ses Applications Spatiales, Toulouse, France;
This paper appears in: Electronics Letters
Publication Date: July 26 1968
Volume: 4,
Issue: 15
On page(s): 305-307
ISSN: 0013-5194
Digital Object Identifier: 10.1049/el:19680237
Current Version Published: 2007-07-11
Abstract
Surface effects are known to cause excess currents in p¿n junctions. A quantitative model is proposed which shows that the essential contribution can be related to surface recombination velocity. An apparent exp (V/mUT) dependence is found for this current component.
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