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Toward Silicon-Based Lasers for Terahertz Sources
Lynch, S. A. Paul, D. J. Townsend, P. Matmon , G. Suet, Z. Kelsall, R. W. Ikonic, Z. Harrison, P. Zhang, J. Norris, David J. Cullis, A. G. Pidgeon, C. R. Murzyn, P. Murdin, B. Bain, M. Gamble, H. S. Zhao, M. Ni, W.-X.

This paper appears in: Selected Topics in Quantum Electronics, IEEE Journal of
Publication Date: Nov.-dec. 2006
Volume: 12, Issue: 6, Part 2
On page(s): 1570-1578
Location: Haifa, Israel,
ISSN: 1077-260X
Digital Object Identifier: 10.1109/JSTQE.2006.884069
Current Version Published: 2007-03-02

Abstract
Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried silicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.

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