Improved selectivity and decreased spontaneous emission from anAR-HR coated SL-MQW DFB semiconductor laser amplifier
Tiemeijer, L.F.
Thijs, P.J.A.
Binsma, J.J.M.
von Roijen, R.
von Dongen, T.
von Helm, L.J.G.
Philips Optoelectron. Center, Eindhoven;
This paper appears in: Photonics Technology Letters, IEEE
Publication Date: Feb 1994
Volume: 6,
Issue: 2
On page(s): 179-181
ISSN: 1041-1135
References Cited: 7
CODEN: IPTLEL
INSPEC Accession Number: 4668191
Digital Object Identifier: 10.1109/68.275421
Current Version Published: 2002-08-06
Abstract
It is shown that the performance of a DFB filter/amplifier can be
improved considerably with respect to selectivity and amplified
spontaneous emission by applying a high reflective coating to the output
facet. To illustrate this a strained-layer multiple quantum well DFB
filter/amplifier with an output facet reflectivity of 97% is compared
with a conventional, AR-coated phase adjusted DFB filter/amplifier. Peak
fiber-to-fiber gains for these devices are 21 and 18 dB, respectively,
when biased at 98% of their threshold current. The transmission gain of
these DFB filter/amplifiers has been measured over a wavelength span of
30 nm. For the AR-HR coated SL-MQW DFB filter/amplifier the selectivity
is improved with 11 dB resulting in an extinction ratio for interfering
channels of better than 35 dB and the amplified spontaneous emission is
reduced by 16 dB down to -37 dBm compared to the conventional DFB
filter/amplifier
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