Self-Pulsation Dynamics in Narrow Stripe Semiconductor Lasers
Landais, P.
Lynch, S.A.
O'Gorman, J.
Fischer, I.
Elsaer, W.
This paper appears in: Quantum Electronics, IEEE Journal of
Publication Date: April 2006
Volume: 42,
Issue: 4
On page(s): 381- 388
ISSN: 0018-9197
Digital Object Identifier: 10.1109/JQE.2006.872309
Current Version Published: 2006-03-27
Abstract
In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization-resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measurements performed with a streak camera. These results demonstrate dynamic spatial-hole burning during pulse formation and evolution. We conclude from these experimental results that the dominant process which drives the self-pulsation in this type of laser diode is carrier induced effective refractive index change induced by the spatial-hole burning.
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