10-nm channel length pentacene transistors
Lee, J.B.
Chang, P.C.
Liddle, J.A.
Subramanian, V.
Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA, USA;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Aug. 2005
Volume: 52,
Issue: 8
On page(s): 1874- 1879
ISSN: 0018-9383
INSPEC Accession Number: 8516162
Digital Object Identifier: 10.1109/TED.2005.851845
Current Version Published: 2005-07-18
Abstract
Organic thin-film transitors (OTFTs) were fabricated with channel lengths as small as 10 nm and an operating voltage of VDD=-0.3 V using e-beam lithography. For sub-200-nm channel lengths, scaling L downwards resulted in increased on-current, decreased Ion/Ioff ratio, VT-rolloff, and drain-induced barrier lowering. These trends are correlated with device topology, electrostatics, and thin-film morphology. Nanoscale OTFT are interesting both as a means of studying intrinsic electrical properties of organic materials and as a possible route toward increasing on-current in organic devices. This paper sheds light on many of the issues encountered when shrinking organic devices, providing insight into approaches for optimizing nanoscaled OTFT.
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