A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles
Volkman, S.K.
Mattis, B.A.
Molesa, S.E.
Lee, J.B.
de la Fuente Vornbrock, A.
Bakhishev, T.
Subramanian, V.
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA;
This paper appears in: Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Publication Date: 13-15 Dec. 2004
On page(s): 769- 772
ISBN: 0-7803-8684-1
INSPEC Accession Number: 8394485
Digital Object Identifier: 10.1109/IEDM.2004.1419287
Current Version Published: 2005-04-25
Abstract
We report on a novel, air-stable, printable, transparent, NMOS semiconductor technology using soluble ZnO nanoparticles. We demonstrate solution-processed transistors with mobility > 0.1 cm2/V·s, which is the highest solution-processed NMOS mobility reported to date. The air-stability and transparency make this device an ideal candidate for low-cost printed displays and CMOS circuitry.
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