AlGaN-GaN double-channel HEMTs
Rongming Chu
Yugang Zhou
Jie Liu
Deliang Wang
Chen, K.J.
Lau, K.M.
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: April 2005
Volume: 52,
Issue: 4
On page(s): 438- 446
ISSN: 0018-9383
INSPEC Accession Number: 8430524
Digital Object Identifier: 10.1109/TED.2005.844791
Current Version Published: 2005-03-21
Abstract
We present the design, fabrication, and characterization of AlGaN-GaN double-channel HEMTs. Two carrier channels are formed in an AlGaN-GaN-AlGaN-GaN multilayer structure grown on a sapphire substrate. Polarization field in the lower AlGaN layer fosters formation of a second carrier channel at the lower AlGaN-GaN interface, without creating any parasitic conduction path in the AlGaN barrier layer. Unambiguous double-channel behaviors are observed at both dc and RF. Bias dependent RF small-signal characterization and parameter extraction were performed. Gain compression at a high current level was attributed to electron velocity degradation induced by interface scattering. Dynamic IV measurement was carried out to analyze large-signal behaviors of the double-channel high-electron mobility transistors. It was found that current collapse mainly occurs in the channel closer to device surface, while the lower channel suffers minimal current collapse, suggesting that trapping/detrapping of surface states is mainly responsible for current collapse. This argument is supported by RF large-signal measurement results.
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