Weave patterned organic transistors on fiber for E-textiles
Lee, J.B.
Subramanian, V.
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Feb. 2005
Volume: 52,
Issue: 2
On page(s): 269- 275
ISSN: 0018-9383
INSPEC Accession Number: 8258414
Digital Object Identifier: 10.1109/TED.2004.841331
Current Version Published: 2005-01-24
Abstract
Flexible transistors were formed directly on fibers in a novel weave-masking fabrication process. Pentacene fiber transistors exhibit mobilities of >0.5 cm2/V-s measured at 20 V VDD and operate stably under a wide range of flexion stress. Devices are defined and positioned solely by a weaving pattern, meaning that simple circuits could potentially be directly built into fabric during manufacturing. This development offers a novel approach for providing information routing within fabric, which is currently a major hurdle in electronic textile development.
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