Position monolithic silicon detector telescope: simulation results
Bottiglieri, G.
Amorini, F.
Cardella, G.
Di Pietro, A.
Fallica, P.G.
Figuera, P.
Liotta, S.F.
Morea, A.
Musumarra, A.
Papa, M.
Rizzo, F.
Tudisco, S.
Valvo, G.
ST Microelectron. s.r.l, Catania, Italy;
Abstract
The collaboration between ST Microelectronics, INFN LNS and Catania University gave birth to the design of a monolithic silicon ΔE-E detector telescope in the last years. Using ion implantation techniques, the ΔE stage of that telescope was integrated on the same silicon E detector and an ultra thin ΔE stage (≈ 1 μm thick) with an excellent charge resolution for low energy (less than 5 MeV) ions was obtained. The positive experience, we got from that already developed silicon monolithic ΔE-E telescope, encouraged its to work on a new generation detector. Our aim is to develop a large area "multidetector" device able to give not only a good charge resolution for low energy ions but also position information. The feasibility of this kind of detector has been verified by 2D simulations carried out by DESSIS ISE(*) device simulator.
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