FinFET SONOS flash memory for embedded applications
Peiqi Xuan
Min She
Harteneck, B.
Liddle, A.
Bokor, J.
King, T.-J.
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA;
This paper appears in: Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Publication Date: 8-10 Dec. 2003
On page(s): 26.4.1- 26.4.4
ISSN:
ISBN: 0-7803-7872-5
INSPEC Accession Number: 7862323
Digital Object Identifier: 10.1109/IEDM.2003.1269355
Current Version Published: 2004-03-03
Abstract
FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.
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