Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies
Iwamoto, M.
Root, D.E.
Scott, J.B.
Cognata, A.
Asbeck, P.M.
Hughes, B.
D'Avanzo, D.C.
Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA, USA;
This paper appears in: Microwave Symposium Digest, 2003 IEEE MTT-S International
Publication Date: 8-13 June 2003
Volume: 2,
On page(s): 635- 638 vol.2
ISSN: 0149-645X
ISBN: 0-7803-7695-1
INSPEC Accession Number: 7677255
Current Version Published: 2003-07-15
Abstract
An analytical large-signal HBT model which accurately accounts for the intricate bias dependence of collector delay in devices fabricated in both GaAs and InP material systems is described. The strongly bias dependent collector delay function accounts for the variation of electron velocity with electric field of the collector, which has consequences for both the electron transit time and capacitance. It is shown that the new formulation significantly improves the prediction of the bias dependence of ft. As a result, simulations over a very wide range of operating conditions match measured data on a wide variety of devices. Distortion predictions are improved since the derivatives of the bias dependent delay are more accurately modeled. This new model is extracted on medium and high breakdown GaAs HBTs, and also on InP DHBTs. Simulation results are verified with comparisons to S-parameter and large-signal measurements.
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