Low threshold operation of membrane buried heterostructure distributed feedback laser
Okamoto, T.
Nunoya, N.
Onodera, Y.
Tamura, S.
Arai, S.
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol.;
This paper appears in: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Publication Date: 2002
On page(s): 115- 118
ISSN: 1092-8669
ISBN: 0-7803-7320-0
INSPEC Accession Number: 7454022
Digital Object Identifier: 10.1109/ICIPRM.2002.1014140
Current Version Published: 2002-08-07
Abstract
Low threshold and single mode operation of 1.55 μm-wavelength GaInAsP/InP membrane buried heterostructure distributed feedback (BH-DFB) lasers consisting of deeply etched single-quantum-well wire-like active regions was demonstrated under room temperature CW optical pumping. A threshold pump power of 4.8 mW and a sub-mode suppression ratio (SMSR) of 39 dB were obtained for a 142 nm thick membrane with a cavity length of 120 μm and a stripe width of 2 μm. The corresponding threshold for current injection was roughly estimated to be 88 μA. The stop-band width was also observed to be 37 nm and an index-coupling coefficient of the grating structure was estimated to be 1140 cm-1.
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