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Record high on-current of 78 μA/ μm in a tunnel field-effect transistor (TFET) is achieved at 0.5 V at room temperature. The TFET employs a staggered AlGaSb/InAs heterojunction with the tunneling direction oriented in-line with the gate field. The measured results are consistent with numerical simulation of the device structure. Simulations of optimized structures suggest that switching speed comparable to that of the MOSFET should be achievable with improvements in the source and drain resistances.