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Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

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6 Author(s)
Wang, Q. ; Department of Electrical Engineering and Computer Science, The University of Kansas, Lawrence, Kansas 66045, USA ; Dahal, R. ; Feng, I.-W. ; Lin, J. Y.
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We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 12 )

Date of Publication:

Sep 2011

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