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Gate voltage control of stochastic resonance in carbon nanotube field effect transistors

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6 Author(s)
Toshio Kawahara ; Center of Applied Superconductivity and Sustainable, Energy Research, Chubu University, Aichi, Japan ; Satarou Yamaguchi ; Kenzo Maehashi ; Yasuhide Ohno
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On the recent developments in nano devices, carbon nanotube (CNT) is one of the candidates for next generation devices. For device applications, it might be the problem that CNTs show large noise because of large surface area. However, sometimes nonlinear systems have advantages in the working with noise. In stochastic resonance (SR), noise could enhance the working properties of devices. Therefore, we combined the noise CNT field effect transistor (FET) and the nonlinear CNT-FET as a test nonlinear system, and the sine wave amplification in the transistor with noise was measured. For the single wall CNTs, noise has the gate voltage (Vg) dependence with 1/f type noise. We prepared several intensity of noise by the amplification and the gate voltage control between -4 V and -1 V for 1//f noise that come from noise of CNT-FETs. Using this noise, we will discuss about the nonlinear response of CNT-FET under the controlled noise by the gate voltage.

Published in:

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Date of Conference:

12-16 June 2011