By Topic

Absorbed-specimen current imaging implementation and characterization in nano-prober for resistive interconnects isolation in 45-nm silicon-on-insulator microprocessors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chen Yaliang ; Device Anal. Lab., Adv. Micro Devices Pte Ltd., Singapore, Singapore ; Lim Soon-Huat ; Narang, V. ; Chin, J.M.

Absorbed-specimen current imaging forms an image based on the electron current signal absorbed by the specimen when the primary electron beam scans across the specimen in the scanning electron microscopy (SEM). This method combined is mainly used to localize resistive or open contact/via sites in a multi-layer silicon-on-insulator (SOI) microprocessor chip. The major benefit of absorbed-current imaging is the isolation of buried interconnect defects beneath the surface layer. We successfully implemented absorbed-current imaging in a nano-prober system and performed detailed characterization of parameters influencing the absorbed current. The absorbed-specimen current imaging method is validated using intentionally shorted interconnects.

Published in:

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Date of Conference:

5-9 July 2010