Referenced Items are not available for this document.
We report high-performance GaN ultraviolet (UV) p-i-n avalanche photodiodes (APDs) fabricated on bulk GaN substrates. The fabricated GaN p-i-n diodes demonstrated optical gains > 104 and low dark current densities operating at wavelengths from 280 to 360 nm. The result is among the highest III-N-based APD gains at the deep UV wavelength of 280 nm reported to date.
Published in:
Photonics Technology Letters, IEEE
(Volume:19
,
Issue:
21
)
Date of Publication: Nov.1, 2007
- Page(s):
- 1744 - 1746
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 9630208
- Digital Object Identifier :
- 10.1109/LPT.2007.906052
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 15 October 2007
- Issue Date :
- Nov.1, 2007
- Sponsored by :
- IEEE Photonics Society
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