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We report high-performance GaN ultraviolet (UV) p-i-n avalanche photodiodes (APDs) fabricated on bulk GaN substrates. The fabricated GaN p-i-n diodes demonstrated optical gains > 104 and low dark current densities operating at wavelengths from 280 to 360 nm. The result is among the highest III-N-based APD gains at the deep UV wavelength of 280 nm reported to date.
Date of Publication: Nov.1, 2007