Field Effect and Photoelectronic Property of Nanodevices Made from Single Bi2S3 Nanowire

Using single-crystal Bi₂S₃ nanowires, we successfully fabricate nanodevices on Si substrate by e-beam lithography. Field-effect as well as novel optoelectronic properties have been obtained from the devices. Under visible or UV light illumination, the conductivity of Bi₂S₃ nanowire raises several to several orders times within milliseconds due to the generation of electron-hole pairs. Illuminating Bi₂S₃ nanowires with UV in different atmosphere shows that O₂ adsorption also affects the conductivity of the Bi₂ S₃ nanowires obviously. We believe such device is a good candidate of novel multi-functional nanodevices